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Description: DIODE GEN PURP 200V 1A AXIAL
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
500 nA @ 200 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.3 V @ 3 A |
Package: |
Bulk |
Series: |
Military, MIL-PRF-19500/427 |
Capacitance @ Vr, F: |
- |
Supplier Device Package: |
A, Axial |
Reverse Recovery Time (trr): |
2 µs |
Mfr: |
Microchip Technology |
Technology: |
Standard |
Operating Temperature - Junction: |
-65°C ~ 200°C |
Package / Case: |
A, Axial |
Voltage - DC Reverse (Vr) (Max): |
200 V |
Current - Average Rectified (Io): |
1A |
Speed: |
Standard Recovery >500ns, > 200mA (Io) |
Base Product Number: |
1N5614 |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
500 nA @ 200 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.3 V @ 3 A |
Package: |
Bulk |
Series: |
Military, MIL-PRF-19500/427 |
Capacitance @ Vr, F: |
- |
Supplier Device Package: |
A, Axial |
Reverse Recovery Time (trr): |
2 µs |
Mfr: |
Microchip Technology |
Technology: |
Standard |
Operating Temperature - Junction: |
-65°C ~ 200°C |
Package / Case: |
A, Axial |
Voltage - DC Reverse (Vr) (Max): |
200 V |
Current - Average Rectified (Io): |
1A |
Speed: |
Standard Recovery >500ns, > 200mA (Io) |
Base Product Number: |
1N5614 |
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