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Description: DIODE GEN PURP 600V 1A SUB SMA
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
5 µA @ 600 V |
Mounting Type: |
Surface Mount |
Voltage - Forward (Vf) (Max) @ If: |
1.1 V @ 1 A |
Package: |
Tape & Reel (TR) |
Series: |
- |
Capacitance @ Vr, F: |
9pF @ 4V, 1MHz |
Supplier Device Package: |
Sub SMA |
Reverse Recovery Time (trr): |
1.8 µs |
Mfr: |
Taiwan Semiconductor Corporation |
Technology: |
Standard |
Operating Temperature - Junction: |
-55°C ~ 175°C |
Package / Case: |
DO-219AB |
Voltage - DC Reverse (Vr) (Max): |
600 V |
Current - Average Rectified (Io): |
1A |
Speed: |
Standard Recovery >500ns, > 200mA (Io) |
Base Product Number: |
S1J |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
5 µA @ 600 V |
Mounting Type: |
Surface Mount |
Voltage - Forward (Vf) (Max) @ If: |
1.1 V @ 1 A |
Package: |
Tape & Reel (TR) |
Series: |
- |
Capacitance @ Vr, F: |
9pF @ 4V, 1MHz |
Supplier Device Package: |
Sub SMA |
Reverse Recovery Time (trr): |
1.8 µs |
Mfr: |
Taiwan Semiconductor Corporation |
Technology: |
Standard |
Operating Temperature - Junction: |
-55°C ~ 175°C |
Package / Case: |
DO-219AB |
Voltage - DC Reverse (Vr) (Max): |
600 V |
Current - Average Rectified (Io): |
1A |
Speed: |
Standard Recovery >500ns, > 200mA (Io) |
Base Product Number: |
S1J |
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