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Description: DIODE SIL CARB 650V 11.6A 4PQFN
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
40 µA @ 650 V |
Mounting Type: |
Surface Mount |
Voltage - Forward (Vf) (Max) @ If: |
1.7 V @ 8 A |
Package: |
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel® |
Series: |
- |
Capacitance @ Vr, F: |
336pF @ 1V, 100kHz |
Supplier Device Package: |
4-PQFN (8x8) |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
onsemi |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-55°C ~ 175°C |
Package / Case: |
4-PowerTSFN |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Current - Average Rectified (Io): |
11.6A |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
FFSM0865 |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
40 µA @ 650 V |
Mounting Type: |
Surface Mount |
Voltage - Forward (Vf) (Max) @ If: |
1.7 V @ 8 A |
Package: |
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel® |
Series: |
- |
Capacitance @ Vr, F: |
336pF @ 1V, 100kHz |
Supplier Device Package: |
4-PQFN (8x8) |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
onsemi |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-55°C ~ 175°C |
Package / Case: |
4-PowerTSFN |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Current - Average Rectified (Io): |
11.6A |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
FFSM0865 |
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