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Description: DIODE MODULE 100V 100A 3TOWER
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays |
Product Status: |
Active |
Current - Average Rectified (Io) (per Diode): |
100A |
Operating Temperature - Junction: |
-55°C ~ 150°C |
Voltage - Forward (Vf) (Max) @ If: |
1.3 V @ 100 A |
Package: |
Bulk |
Series: |
- |
Diode Configuration: |
1 Pair Common Anode |
Supplier Device Package: |
Three Tower |
Reverse Recovery Time (trr): |
75 ns |
Mfr: |
GeneSiC Semiconductor |
Technology: |
Standard |
Package / Case: |
Three Tower |
Voltage - DC Reverse (Vr) (Max): |
100 V |
Mounting Type: |
Chassis Mount |
Speed: |
Fast Recovery =< 500ns, > 200mA (Io) |
Base Product Number: |
MURT20010 |
Current - Reverse Leakage @ Vr: |
25 µA @ 50 V |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays |
Product Status: |
Active |
Current - Average Rectified (Io) (per Diode): |
100A |
Operating Temperature - Junction: |
-55°C ~ 150°C |
Voltage - Forward (Vf) (Max) @ If: |
1.3 V @ 100 A |
Package: |
Bulk |
Series: |
- |
Diode Configuration: |
1 Pair Common Anode |
Supplier Device Package: |
Three Tower |
Reverse Recovery Time (trr): |
75 ns |
Mfr: |
GeneSiC Semiconductor |
Technology: |
Standard |
Package / Case: |
Three Tower |
Voltage - DC Reverse (Vr) (Max): |
100 V |
Mounting Type: |
Chassis Mount |
Speed: |
Fast Recovery =< 500ns, > 200mA (Io) |
Base Product Number: |
MURT20010 |
Current - Reverse Leakage @ Vr: |
25 µA @ 50 V |
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